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HT82V735 330mw stereo audio power amp with shutdown block diagram pin assignment pin description pin no. pin name i/o description 1 out1 o channel 1 output pin 2 in1 i channel 1 audio input 3 bias i supports a voltage driver for internal bias 4 vss negative power supply, ground 5ce i power down mode when held high, i (power down) =1 a 6 in2 i channel 2 audio input 7 out2 o channel 2 output pin 8 vdd positive power supply rev. 1.10 1 february 18, 2004 features operating voltage: 2.4v~6.0v very low standby current 0.5 a (typ.) high signal-to-noise ratio high slew rate output power 330mw at 10% thd+n into 8 excellent power supply ripple rejection low power consumption wide temperature operating range direct drive speaker shutdown function 8-pin sop package applications cd rom dvd player notebook/desktop pc portable audio device headphone amplifier microphone pre-amplifier discman/mp3 general description HT82V735 is a class ab stereo earphone driver de - signed for portable digital audio application. pin assign - ments and application circuits are compatible with lm4880 which is suitable for effective low cost applica - tions. the HT82V735 can deliver a maximum of 330mw output power to an 8 load with less than 10% (thd+n) from a 5v power supply. the very low standby current in shutdown mode contributes to the reduction of power consumption of battery-powered equipments. it provides 8-sop package.

absolute maximum ratings supply voltage .............................v ss 0.3v to v ss +6v storage temperature ........................... 50 cto125 c input voltage .............................v ss 0.3v to v dd +0.3v operating temperature .......................... 20 cto70 c note: these are stress ratings only. stresses exceeding the range specified under absolute maximum ratings may cause substantial damage to the device. functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliabil - ity. electrical characteristics v ss =0v; f i =1khz; r l =32 ; ta=25 c symbol parameter test conditions min. typ. max. unit v dd conditions supplies v dd supply voltage 2.4 6v i dd supply current 5v no load 10 ma i pd power-down current 5v 1 a d.c. characteristics v i(os) input offset voltage 5v 10 mv i o maximum output current 5v (thd+n)/s<0.1% 62 ma r o output resistance 5v 230 m v o output voltage swing 5v r l =8 0.66 3v r l =16 0.38 3.15 v r l =32 0.18 3.29 v psrr power supply rejection ratio 5v c s =2.2 f, v ripple =200v rms , f=120hz 66 db x talk channel separation 5v p o =200mw, r l =8 , c b =2.2 f 85 db a.c. characteristics (thd+n)/s total harmonic distortion plus noise to signal ratio 5v p o =200mw, r l =8 , f=1khz 0.03 % p o =120mw, r l =16 , f=1khz 0.01 p o =75mw, r l =32 , f=1khz 0.01 3.3v p o =30mw, r l =32 , f=1khz 0.01 p o output power 5v (thd+n)/s=0.1%, f=1khz mw r l =8 240 r l =16 160 r l =32 90 (thd+n)/s=10%, f=1khz r l =8 330 r l =16 200 r l =32 110 HT82V735 rev. 1.10 2 february 18, 2004
symbol parameter test conditions min. typ. max. unit v dd conditions s/n signal to noise ratio 5v v in =1 vrms ,r l =8 92 db sr slew rate 5v 3 v/ s att power-down attenuation 5v 1khz, 0db 70 db typical performance characteristics thd+n vs. output power HT82V735 rev. 1.10 3 february 18, 2004

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HT82V735 rev. 1.10 4 february 18, 2004

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application circuits HT82V735 rev. 1.10 5 february 18, 2004 ! ! ' ! ! ! ' & ! & ! ( ! ( ! & &
package information 8-pin sop (150mil) outline dimensions symbol dimensions in mil min. nom. max. a 228 244 b 149 157 c14 20 c 189 197 d53 69 e 50 f4 10 g22 28 h4 12 0 10 HT82V735 rev. 1.10 6 february 18, 2004
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product tape and reel specifications reel dimensions sop 8n symbol description dimensions in mm a reel outer diameter 330
1.0 b reel inner diameter 62
1.5 c spindle hole diameter 13.0+0.5 0.2 d key slit width 2.0
0.5 t1 space between flange 12.8+0.3 0.2 t2 reel thickness 18.2
0.2 HT82V735 rev. 1.10 7 february 18, 2004

carrier tape dimensions sop 8n symbol description dimensions in mm w carrier tape width 12.0+0.3 0.1 p cavity pitch 8.0
0.1 e perforation position 1.75
0.1 f cavity to perforation (width direction) 5.5
0.1 d perforation diameter 1.55
0.1 d1 cavity hole diameter 1.5+0.25 p0 perforation pitch 4.0
0.1 p1 cavity to perforation (length direction) 2.0
0.1 a0 cavity length 6.4
0.1 b0 cavity width 5.20
0.1 k0 cavity depth 2.1
0.1 t carrier tape thickness 0.3
0.05 c cover tape width 9.3 HT82V735 rev. 1.10 8 february 18, 2004
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HT82V735 rev. 1.10 9 february 18, 2004 copyright 2004 by holtek semiconductor inc. the information appearing in this data sheet is believed to be accurate at the time of publication. however, holtek as - sumes no responsibility arising from the use of the specifications described. the applications mentioned herein are used solely for the purpose of illustration and holtek makes no warranty or representation that such applications will be suitable without further modification, nor recommends the use of its products for application that may present a risk to human life due to malfunction or otherwise. holtek s products are not authorized for use as critical components in life support devices or systems. holtek reserves the right to alter its products without prior notification. for the most up-to-date information, please visit our web site at http://www.holtek.com.tw. holtek semiconductor inc. (headquarters) no.3, creation rd. ii, science park, hsinchu, taiwan tel: 886-3-563-1999 fax: 886-3-563-1189 http://www.holtek.com.tw holtek semiconductor inc. (taipei sales office) 4f-2, no. 3-2, yuanqu st., nankang software park, taipei 115, taiwan tel: 886-2-2655-7070 fax: 886-2-2655-7373 fax: 886-2-2655-7383 (international sales hotline) holtek semiconductor inc. (shanghai sales office) 7th floor, building 2, no.889, yi shan rd., shanghai, china 200233 tel: 021-6485-5560 fax: 021-6485-0313 http://www.holtek.com.cn holtek semiconductor inc. (shenzhen sales office) 5/f, unit a, productivity building, cross of science m 3rd road and gaoxin m 2nd road, science park, nanshan district, shenzhen, china 518057 tel: 0755-8616-9908, 8616-9308 fax: 0755-8616-9533 holtek semiconductor inc. (beijing sales office) suite 1721, jinyu tower, a129 west xuan wu men street, xicheng district, beijing, china 100031 tel: 010-6641-0030, 6641-7751, 6641-7752 fax: 010-6641-0125 holtek semiconductor inc. (chengdu sales office) 709, building 3, champagne plaza, no.97 dongda street, chengdu, sichuan, china 610016 tel: 028-6653-6590 fax: 028-6653-6591 holmate semiconductor, inc. (north america sales office) 46729 fremont blvd., fremont, ca 94538 tel: 510-252-9880 fax: 510-252-9885 http://www.holmate.com

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